p-type conduction in codoped ZnO thin films

被引：135

作者：

Singh, AV

Mehra, RM

Wakahara, A

Yoshida, A

机构：

[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India

[2] Toyohashi Univ Technol, Toyohashi, Aichi 4418580, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 01期

关键词：

D O I：

10.1063/1.1527210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-type conduction in ZnO thin films was realized by the codoping method. Types of conduction and carrier density in codoped ZnO films were found to be dependent on the oxygen partial pressure ratios in the sputtering gas mixture. The lowest room temperature resistivity was found to be 11.77 Omegacm with a hole density of 9.0x10(16) cm(-3) for the films deposited in 60% of oxygen partial pressure ratio. Codoped films were found to be c-oriented and highly transparent. (C) 2003 American Institute of Physics.

引用

页码：396 / 399

页数：4

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