ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector

被引：83

作者：

Leung, Y. H. ^{[1
]}

He, Z. B. ^{[1
]}

Luo, L. B. ^{[1
]}

Tsang, C. H. A. ^{[1
]}

Wong, N. B. ^{[1
]}

Zhang, W. J. ^{[1
]}

Lee, S. T. ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, COSDAF, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

关键词：

aluminium; crystal growth from solution; II-VI semiconductors; leakage currents; nanotechnology; nanowires; nitrogen; photodetectors; p-n junctions; rectification; semiconductor growth; semiconductor thin films; sol-gel processing; ultraviolet detectors; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3299269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated a simple and low-cost fabrication of ZnO p-n homojunction. The junction consists of n-type ZnO nanowires array by a hydrothermal method covered with p-type Al, N co-doped ZnO film by a sol-gel method. The junction exhibits good rectification characteristics, with reverse leakage current and rectification ratio of similar to 5 mu A and similar to 150 at bias of 3 V, respectively. The junction is operated as a photodetector when light radiation is shined on the glass-side of the device. The photodetector shows a peak responsivity at 384 nm with UV-visible responsivity ratio (R(384 nm)/R(550 nm)) of similar to 70 at an operating bias of -3 V.

引用

页数：3

共 12 条

[1] Low resistivity p-ZnO films fabricated by sol-gel spin coating [J].

Cao, Yongge ;

Miao, Lei ;

Tanemura, Sakae ;

Tanemura, Masaki ;

Kuno, Yohei ;

Hayashi, Yasuhiko .

APPLIED PHYSICS LETTERS, 2006, 88 (25)

[2] Optical properties of ZnO nanostructures [J].

Djurisic, Aleksandra B. ;

Leung, Yu Hang .

SMALL, 2006, 2 (8-9) :944-961

[3] Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing [J].

Dunlop, L. ;

Kursumovic, A. ;

MacManus-Driscoll, J. L. .

APPLIED PHYSICS LETTERS, 2008, 93 (17)

[4] General route to vertical ZnO nanowire arrays using textured ZnO seeds [J].

Greene, LE ;

Law, M ;

Tan, DH ;

Montano, M ;

Goldberger, J ;

Somorjai, G ;

Yang, PD .

NANO LETTERS, 2005, 5 (07) :1231-1236

[5] p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101 [J].

Hwang, DK ;

Kang, SH ;

Lim, JH ;

Yang, EJ ;

Oh, JY ;

Yang, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[6] UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering [J].

Lim, Jae-Hong ;

Kang, Chang-Ku ;

Kim, Kyoung-Kook ;

Park, Il-Kyu ;

Hwang, Dae-Kue ;

Park, Seong-Ju .

ADVANCED MATERIALS, 2006, 18 (20) :2720-+

[7] Fabrication of green and orange photoluminescent, undoped ZnO films using spray pyrolysis [J].

Studenikin, SA ;

Golego, N ;

Cocivera, M .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) :2287-2294

[8] Defects in ZnO nanorods prepared by a hydrothermal method [J].

Tam, K. H. ;

Cheung, C. K. ;

Leung, Y. H. ;

Djurisic, A. B. ;

Ling, C. C. ;

Beling, C. D. ;

Fung, S. ;

Kwok, W. M. ;

Chan, W. K. ;

Phillips, D. L. ;

Ding, L. ;

Ge, W. K. .

JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (42) :20865-20871

[9] Transparent conducting aluminum-doped zinc oxide thin film prepared by sol-gel process followed by laser irradiation treatment [J].

Tsang, W. M. ;

Wong, F. L. ;

Fung, M. K. ;

Chang, J. C. ;

Lee, C. S. ;

Lee, S. T. .

THIN SOLID FILMS, 2008, 517 (02) :891-895

[10] Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition [J].

Xiang, Bin ;

Wang, Pengwei ;

Zhang, Xingzheng ;

Dayeh, Shadi. A. ;

Aplin, David P. R. ;

Soci, Cesare ;

Yu, Dapeng ;

Wang, Deli .

NANO LETTERS, 2007, 7 (02) :323-328

← 1 2 →