Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing

被引：61

作者：

Dunlop, L. ^{[1
]}

Kursumovic, A. ^{[1
]}

MacManus-Driscoll, J. L. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 17期

关键词：

D O I：

10.1063/1.3000604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen doped ZnO (ZnO:N) films were deposited by atmospheric atomic layer deposition (ALD) between 100 and 300 degrees C. Postannealing was required to remove compensating defects. After a low temperature dark annealing, originally n-type films became p-type. Films deposited at low temperatures (<= 150 degrees C) have low hole mobilities (mu) of 0.2-0.4 cm(2) V-1 s(-1) and moderate hole concentrations (n(p)) of around 1 x 10(15) cm(-3). Higher temperature deposited films (>= 200 degrees C) have higher mu values (6 cm(2) V-1 s(-1)) but n(p) values <1 x 10(13) cm(-3). This crossover in transport properties can be explained by the opposing effects of deposition temperature on nitrogen doping level and distribution, and film crystallinity. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000604]

引用

页数：3

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