p-ZnO/n-Si heterojunction:: Sol-gel fabrication, photoresponse properties, and transport mechanism

被引：141

作者：

Dutta, M. ^{[1
]}

Basak, D. ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 21期

关键词：

D O I：

10.1063/1.2937124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-ZnO/n-Si heterojunction is achieved by depositing Al-N codoped p-type ZnO film on n-Si by low-cost sol-gel technique. The junction shows good diode characteristics with rectification ratio (I-F/I-R) similar to 10 at 4 V in the dark. The photoresponse of the heterojunction is investigated by studying the current-voltage characteristics under the ultraviolet (370 nm) and visible light (450 nm) illuminations. By fitting the experimental data, we have proposed the current transport mechanism to be dominated by the recombination tunneling at lower and by the space-charge limited current at higher forward voltages, which are further supported by the photocapacitance and photocurrent spectra. (c) 2008 American Institute of Physics.

引用

页数：3

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