Band offset measurements of ZnO/6H-SiC heterostructure system

被引：22

作者：

Alivov, Ya. I.

Xiao, B.

Fan, Q.

Morkoc, H.

Johnstone, D.

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

[2] SEMETROL, Chesterfield, VA 23838 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期

关键词：

D O I：

10.1063/1.2360924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured by a variety of methods. Temperature dependent current-voltage characteristic, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25, 1.1, and 1.22 eV, respectively. (c) 2006 American Institute of Physics.

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页数：3

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