Electrical and optical properties of n-ZnO/p-SiC heterojunctions

被引：19

作者：

Alivov, YI ^{[1
]}

Johnstone, D ^{[1
]}

Özgür, Ü ^{[1
]}

Avrutin, V ^{[1
]}

Fan, Q ^{[1
]}

Akarca-Biyikli, SS ^{[1
]}

Morkoç, H ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期

关键词：

ZnO; heterojunction; diode; CV; DDLTS; electroluminescence;

D O I：

10.1143/JJAP.44.7281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of n-ZnO/p-6H-SiC heterostructures have been grown by molecular-beam epitaxy, and electrical and optical proper-ties of the mesa diodes have been studied. Current versus voltage (I-V) characteristics of the samples revealed a good rectifying behavior of all samples with a typical leakage current less than 10(-7) A at -8, and with forward currents changing from sample to sample and at 8 V lying in the range 0.8-10 mA. Capacitance-voltage (C-V) profiles and double pulse deep level transient spectroscopy (DDLTS) indicate interface states in the 10(12)-10(13)/cm(2) eV range, sharply peaked below 0.5 eV. Under forward bias electroluminescence (EL) emission was observed from most of the samples in yellow and violet regions with maxima at similar to 2.1 and similar to 2.92eV, which attributed to the SiC side of the n-ZnO/p-6H-SiC heterojunction, from the comparison with the photoluminescence spectra of n-ZnO and p-SiC.

引用

页码：7281 / 7284

页数：4

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