Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation

被引：23

作者：

Huang, Sheng-Yao ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Chen, Min-Chen ^{[1
]}

Tsao, Shu-Wei ^{[3
]}

Chen, Shih-Ching ^{[1
]}

Tsai, Chih-Tsung ^{[1
]}

Lo, Hung-Ping ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2011年 / 61卷 / 01期

关键词：

Indium gallium zinc oxide (IGZO); Thin film transistors (TFTs); Ammonia (NH3);

D O I：

10.1016/j.sse.2011.01.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of ammonia gas on amorphous indium gallium zinc oxide thin film transistors is investigated. The ammonia is incorporated into the sputtered a-IGZO film during the deposition process. The results indicate that the sub-threshold swing of the NH3 incorporated TFTs is significantly improved from 2.8 to 1.0 V/decade, and the hysteresis phenomenon is also suppressed during the forward and reverse sweeping measurement. By X-ray photoelectron spectroscopy analyses. Zn-N and O-H bonds are observed in ammonia incorporated a-IGZO film. Therefore, the improvements in the electrical performance of TFTs are attributed to the passivation of dangling bonds and/or defects by ammonia. (C) 2011 Elsevier Ltd All rights reserved.

引用

页码：96 / 99

页数：4

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