Inkjet-printed InGaZnO thin film transistor

被引：155

作者：

Kim, Gun Hee ^{[1
]}

Kim, Hyun Soo ^{[1
]}

Shin, Hyun Soo ^{[1
]}

Ahn, Byun Du ^{[1
]}

Kim, Kyung Ho ^{[1
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 14期

关键词：

IGZO; Inkjet printing; Thin film transistor; TRANSPARENT; SPECTROSCOPY; MECHANISM; RF;

D O I：

10.1016/j.tsf.2009.01.151

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 mu m, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO3(ZnO)(2) after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of similar to 0.03 cm(2)/Vs in saturation region and an on-to-off current ratio greater than similar to 10(4). (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4007 / 4010

页数：4

共 25 条

[1]

[Anonymous], 1992, Handbook of X-Ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data 1992

[2] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[3] Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties [J].

Cebulla, R ;

Wendt, R ;

Ellmer, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :1087-1095

[4] Surface characterization of transparent conductive oxide Al-doped ZnO films [J].

Chen, M ;

Pei, ZL ;

Sun, C ;

Wen, LS ;

Wang, X .

JOURNAL OF CRYSTAL GROWTH, 2000, 220 (03) :254-262

[5] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[6] Contact line deposits in an evaporating drop [J].

Deegan, RD ;

Bakajin, O ;

Dupont, TF ;

Huber, G ;

Nagel, SR ;

Witten, TA .

PHYSICAL REVIEW E, 2000, 62 (01) :756-765

[7] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[8] X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS [J].

FAN, JCC ;

GOODENOUGH, JB .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3524-3531

[9] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Martins, RFP ;

Pereira, LMN .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2541-2543

[10] OXIDES ON GAAS AND INAS SURFACES - AN X-RAY-PHOTOELECTRON-SPECTROSCOPY STUDY OF REFERENCE COMPOUNDS AND THIN OXIDE LAYERS [J].

HOLLINGER, G ;

SKHEYTAKABBANI, R ;

GENDRY, M .

PHYSICAL REVIEW B, 1994, 49 (16) :11159-11167

← 1 2 3 →