Inkjet-printed InGaZnO thin film transistor

被引:155
作者
Kim, Gun Hee [1 ]
Kim, Hyun Soo [1 ]
Shin, Hyun Soo [1 ]
Ahn, Byun Du [1 ]
Kim, Kyung Ho [1 ]
Kim, Hyun Jae [1 ]
机构
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea
关键词
IGZO; Inkjet printing; Thin film transistor; TRANSPARENT; SPECTROSCOPY; MECHANISM; RF;
D O I
10.1016/j.tsf.2009.01.151
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report inkjet-printed InGaZnO (IGZO) thin film transistors (TFTs). IGZO ink was prepared by dissolving indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate into 2-methoxyethanol with additional stabilizers. The resulting films were inkjet-printed with a resolution of 300 dots per inch using droplets with a diameter of 40 mu m, and a volume of 35 pl. The films exhibited high optical transparency in the visible range and had a polycrystalline phase of InGaO3(ZnO)(2) after thermal annealing treatment. The chemical composition of this IGZO sample was also determined, and shown to have high stoichiometric characteristics of low oxygen deficiency. The TFTs with a conventional inverted staggered structure using inkjet-printed IGZO as an active channel layer had a field-effect mobility of similar to 0.03 cm(2)/Vs in saturation region and an on-to-off current ratio greater than similar to 10(4). (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:4007 / 4010
页数:4
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