Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films

被引：51

作者：

Cao, P. ^{[1
,2
]}

Zhao, D. X. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Shen, D. Z. ^{[1
]}

Lu, Y. M. ^{[1
]}

Yao, B. ^{[1
]}

Li, B. H. ^{[1
]}

Bai, Y. ^{[3
]}

Fan, X. W. ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100864, Peoples R China

[3] Chinese Acad Sci, Changchun Inst Fine Mech & Phys, State Key Lab Appl Opt, Changchun 130033, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 09期

关键词：

p-type ZnO; nitrogen doping; NH3; plasma;

D O I：

10.1016/j.apsusc.2007.10.056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH3 plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By Hall-effect measurement, a p-type conductivity was observed for the treated film with the hole density of 2.2 x 10(16) cm(-3). X- ray photoelectron spectroscopy (XPS) results confirmed that nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions. In low temperature photoluminescence spectra, an emission peak corresponding to acceptor - donor pair was observed. From this emission peak we calculated the N-related acceptor binding energy to be 130 meV. (c) 2007 Elsevier B. V. All rights reserved.

引用

页码：2900 / 2904

页数：5

共 31 条

[1] On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide -: art. no. 112112 [J].

Barnes, TM ;

Olson, K ;

Wolden, CA .

APPLIED PHYSICS LETTERS, 2005, 86 (11) :1-3

[2] Nitriding of titanium by NH3 RF plasma:: a study of the corrosion resistance and the mechanical properties of the protective films formed at the solid surface [J].

Bellakhal, N .

MATERIALS RESEARCH BULLETIN, 2002, 37 (15) :2539-2546

[3] p type doping of zinc oxide by arsenic ion implantation -: art. no. 192103 [J].

Braunstein, G ;

Muraviev, A ;

Saxena, H ;

Dhere, N ;

Richter, V ;

Kalish, R .

APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3

[4]

d'Agostino R., 1981, Plasma Chem. Plasma Process, V1, P19, DOI [10.1007/BF00566373, DOI 10.1007/BF00566373]

[5] CHARACTERIZATION OF TIN COATINGS AND OF THE TIN/SI INTERFACE BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY [J].

JOUAN, PY ;

PEIGNON, MC ;

CARDINAUD, C ;

LEMPERIERE, G .

APPLIED SURFACE SCIENCE, 1993, 68 (04) :595-603

[6] Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant [J].

Kim, KK ;

Kim, HS ;

Hwang, DK ;

Lim, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2003, 83 (01) :63-65

[7] Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy [J].

Ko, HJ ;

Chen, YF ;

Yao, T ;

Miyajima, K ;

Yamamoto, A ;

Goto, T .

APPLIED PHYSICS LETTERS, 2000, 77 (04) :537-539

[8] Compensation mechanism for N acceptors in ZnO [J].

Lee, EC ;

Kim, YS ;

Jin, YG ;

Chang, KJ .

PHYSICAL REVIEW B, 2001, 64 (08)

[9] Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy [J].

Liang, HW ;

Lu, YM ;

Shen, DZ ;

Yan, JF ;

Li, BH ;

Zhang, JY ;

Liu, YC ;

Fan, XW .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :305-310

[10] P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO [J].

Liang, HW ;

Lu, YM ;

Shen, DZ ;

Liu, YC ;

Yan, JF ;

Shan, CX ;

Li, BH ;

Zhang, ZZ ;

Zhang, JY ;

Fan, XW .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (06) :1060-1065

← 1 2 3 4 →