p type doping of zinc oxide by arsenic ion implantation -: art. no. 192103

p type doping of polycrystalline ZnO thin films, by implantation of arsenic ions, is demonstrated. The approach consisted of carrying out the implantations at liquid-nitrogen temperature (similar to-196 degrees C), followed by a rapid in situ heating of the sample, at 560 degrees C for 10 min, and ex situ annealing at 900 degrees C for 45 min in flowing oxygen. p type conductivity with a hole concentration of 2.5x10(13) cm(-2) was obtained using this approach, following implantation of 150 keV 5x10(14) As/cm(2). A conventional room-temperature implantation of 1x10(15) As/cm(2), followed by the same ex situ annealing, resulted in n type conductivity with a carrier concentration of 1.7x10(12) cm(-2). (C) 2005 American Institute of Physics.