Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy

被引：14

作者：

Liang, HW ^{[1
]}

Lu, YM ^{[1
]}

Shen, DZ ^{[1
]}

Yan, JF ^{[1
]}

Li, BH ^{[1
]}

Zhang, JY ^{[1
]}

Liu, YC ^{[1
]}

Fan, XW ^{[1
]}

机构：

[1] Chinese Acad Sci, Chang Chun Inst Opt Fine Mechan & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

molecular beam epitaxy; zinc compounds; semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2005.01.024

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-quality ZnO thin films on c-plane sapphire (Al2O3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that, below 500 degrees C, ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 degrees C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with (2D) growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (002) peak becomes narrow. From the photoluminescence (PL) spectra, ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature, which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N = 7.66 x 10(16) cm(-3) was obtained in the ZnO thin films with the 2D grown, which is closed to that of bulk ZnO. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：305 / 310

页数：6

共 16 条

[1] Optically pumped lasing of ZnO at room temperature [J].