Charge carrier induced lattice strain and stress effects on As activation in Si

被引：108

作者：

Ahn, Chihak ^{[1
]}

Dunham, Scott T. ^{[1
,2
]}

机构：

[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA

[2] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2956401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied lattice expansion coefficient due to As using density functional theory with particular attention to separating the impact of electrons and ions. Based on As deactivation mechanism under equilibrium conditions, the effect of stress on As activation is predicted. We find that biaxial stress results in minimal impact on As activation, which is consistent with experimental observations by Sugii [J. Appl. Phys. 96, 261 (2004)] and Bennett [J. Vac. Sci. Technol. B 26, 391 (2008)]. (C) 2008 American Institute of Physics.

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页数：3

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