HIGH-TEMPERATURE EQUILIBRIUM CARRIER DENSITY OF ARSENIC-DOPED SILICON

[1] ANGELUCCI R, 1987, 1987 ESSDERC P, P461

[2] ANGELUCCI R, 1988, J LESS-COMMON MET, V145, P339

[3] CONTRAST OF SMALL SIX PARTICLES IN SILICON BY COMPUTED HREM IMAGES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 109 (01): : 53 - 60

[4] ARMIGLIATO A, 1986, J ELECTROCHEM SOC, V133, P2660

[5] CARGILL GS, 1987, AM PHYS SOC, V32, P655

[6] ERBIL A, 1987, PHYS REV B, V34, P1392

[7] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[8] FAIR RB, 1983, ELECTROCHEMICAL SOC, P963

[9] GENERALIZED-MODEL FOR THE CLUSTERING OF AS DOPANTS IN SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1826 - 1831

[10] HOYT JL, 1986, MATER RES SOC S P, V52, P15

[1] ANGELUCCI R, 1987, 1987 ESSDERC P, P461

[2] ANGELUCCI R, 1988, J LESS-COMMON MET, V145, P339

[3] CONTRAST OF SMALL SIX PARTICLES IN SILICON BY COMPUTED HREM IMAGES [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 109 (01): : 53 - 60

[4] ARMIGLIATO A, 1986, J ELECTROCHEM SOC, V133, P2660

[5] CARGILL GS, 1987, AM PHYS SOC, V32, P655

[6] ERBIL A, 1987, PHYS REV B, V34, P1392

[7] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[8] FAIR RB, 1983, ELECTROCHEMICAL SOC, P963

[9] GENERALIZED-MODEL FOR THE CLUSTERING OF AS DOPANTS IN SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1826 - 1831

[10] HOYT JL, 1986, MATER RES SOC S P, V52, P15