Room-temperature photochemical hole burning in Eu3+-doped Al2O3-SiO2 glass

被引：47

作者：

Nogami, M ^{[1
]}

Hayakawa, T ^{[1
]}

Ishikawa, T ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Mat Sci & Technol, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 20期

关键词：

D O I：

10.1063/1.125234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Persistent spectral hole burning was observed at room temperature in Eu3+-doped Al2O3-SiO2 glass. The glass was obtained by heating in hydrogen gas to reduce some Eu3+ ions to Eu2+ and the spectral hole was burned in the excitation spectrum of the F-7(0)-->D-5(0) transition of Eu3+. The depth of the hole burned at 200 K was similar to 7% of the total excitation intensity and independent of temperature up to 350 K. A possible mechanism for hole burning is the electron transfer between the Eu3+ ions and the Al-related defect centers. (C) 1999 American Institute of Physics. [S0003-6951(99)04046-2].

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页码：3072 / 3074

页数：3

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