Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

被引：13

作者：

Andresen, S. E. S. ^{[1
]}

Wu, F. ^{[2
]}

Danneau, R. ^{[2
]}

Gunnarsson, D. ^{[2
]}

Hakonen, P. J. ^{[2
]}

机构：

[1] Univ Copenhagen, Niels Bohr Inst, Nanosci Ctr, DK-2100 Copenhagen O, Denmark

[2] Helsinki Univ Technol, Low Temp Lab, FIN-02015 Espoo, Finland

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 03期

基金：

芬兰科学院;

关键词：

D O I：

10.1063/1.2968123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated radio-frequency single-electron transistor operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At a temperature of 4.2 K and with a carrier frequency of 754.2 MHz, we reach a charge sensitivity of 2.3 X 10(-6)e/root Hz over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7 X 10(13) Hz(3/2)/e, which is by one order of magnitude better than those for typical radio-frequency single-electron transistors. (c) 2008 American Institute of Physics.

引用

页数：4

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