Applied voltage and temperature dependence of tunneling magnetoresistance

被引：17

作者：

Tezuka, N ^{[1
]}

Oogane, M ^{[1
]}

Miyazaki, T ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 198-99卷

关键词：

tunnel magnetoresistance; magnetic impurity; zero bias anomaly; Fe/Al-oxide/Fe; 80NiFe/Al-oxide/Co;

D O I：

10.1016/S0304-8853(98)01056-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of tunnel magnetoresistance (TMR) ratio on temperature and applied voltage has been studied for Fe/Al-oxide/Fe and 80NiFe/Al-oxide/Co junctions. Their dependence for an Fe/Al-oxide/Fe junction is greater than that for a 80NiFe/Al-oxide/Co junction. The rapid decrease of TMR ratio with increasing temperature for the Fe/Al-oxide/Fe junction below 100 K or 10 mV and small decrease below about 40 K for the 80NiFe/Al-oxide/Co junction can be explained by the spin flip scattering due to magnetic impurities. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：149 / 151

页数：3

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