Temperature dependence of luminescence decay time of InP quantum disks

被引：4

作者：

Okuno, T ^{[1
]}

Ren, HW

Sugisaki, M

Nishi, K

Sugou, S

Masumoto, Y

机构：

[1] Univ Tsukuba, Inst Phys, Ibaraki, Osaka 3058571, Japan

[2] JST, ERATO, Tsukuba Res Consortium, Single Quantum Dot Project, Ibaraki, Osaka 3002635, Japan

[3] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 3058501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

self-assembled quantum dots; quantum disks; InP; GaInP; photoluminescence; radiative lifetime;

D O I：

10.1143/JJAP.38.1094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measured temperature dependence of luminescence decay time of self-assembled InP dots in GaInP lattice-matched to GaAs. The radiative lifetime of InP-dot luminescence is independent of temperature below similar to 40 K and is linear with temperature between similar to 40 and similar to 120 K. These two features in the two temperature regimes are characteristic of zero-dimensional and two-dimensional structures, respectively. This temperature behavior of the lifetime is thought to be caused by the disklike shape of the InP dots; the dot lateral widths are longer than their heights, and thus they have an intermediate character between zero-dimension and two-dimensions.

引用

收藏

页码：1094 / 1097

页数：4

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