BaRuO3 thin film electrode for ferroelectric lead zirconate titanate capacitors

被引:7
作者
Koo, SM [1 ]
Zheng, LR [1 ]
Rao, KV [1 ]
机构
[1] Royal Inst Technol, Dept Condensed Matter Phys, S-10044 Stockholm, Sweden
关键词
D O I
10.1557/JMR.1999.0516
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The characteristics of a ferroelectric Pb(Zr0.52Ti0.48)O-3 (PZT) capacitor on conductive BaRuO3 thin films deposited by pulsed laser deposition (PLD) were investigated. The BaRuO3 layer grown epitaxially on LaAlO3(100) substrates at a substrate temperature of 700 degrees C was found to have a resistivity around 145 mu Omega cm at 300 K. The subsequently deposited PZT film showed a c-axis orientation perpendicular to the substrate, and the remnant polarization, Delta P (= P* - P<^>), and coercive field, E-C, of the capacitor were 24.7 mu C/cm(2) and 52 kV/cm, respectively. Fatigue characteristics of the PZT on BaRuO3 electrodes are far better than those obtained with polycrystalline PZT with Pt structures and comparable to those on epitaxial YBa2Cu3O7-x electrodes. With the new metallic electrode, the PZT layer exhibits no serious degradation in fatigue endurance up to 10(10) cycles.
引用
收藏
页码:3833 / 3836
页数:4
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