Single crystal thin films of conductive oxides SrRuO3 and ferroelectric heterostructures

被引:11
作者
Eom, CB [1 ]
Rao, RA
Gan, Q
Wasa, K
Werder, DJ
机构
[1] Duke Univ, Dept Mech Engn & Mat Sci, Durham, NC 27708 USA
[2] Res Inst Innovat Technol Earth RITE, Kyoto 61902, Japan
[3] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
基金
美国国家科学基金会;
关键词
ferroelectric heterostructures; SrRuO3; electrodes; growth; domain structures; perovskite;
D O I
10.1080/10584589808202068
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have grown epitaxial thin films of the conductive oxide SrRuO3 with well controlled surface morphology and domain structure using vicinal (001) SrTiO3 substrates. Scanning tunneling microscopy and x-ray diffraction show that the SrRuO3 thin films on miscut (001) SrTiO3 substrates with miscut angle > 2 degrees grow by step flow in one direction leading to single crystal films. In contrast, the SrRuO3 thin films on exact (001) SrTiO3 substrates grow by two dimensional nucleation resulting in a two domain in-plane structure. The single crystal thin films have been used as electrodes for the growth of epitaxial ferroelectric PbTiO3 and PZT layers. The PbTiO3/SrRuO3 and PZT/SrRuO3 heterostructures have high crystalline quality, coherent interfaces and a cube-on-cube epitaxial growth with respect to the substrate. These epitaxial heterostructures have superior fatigue characteristics and look promising for the fabrication of integrated single crystal ferroelectric devices.
引用
收藏
页码:251 / 261
页数:11
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