Trapping and detrapping effects in high-quality chemical-vapor-deposition diamond films: Pulse shape analysis of diamond particle detectors

An analysis of the time evolution of the response of diamond particle detectors is carried out, using as a probe 5.5 MeV alpha particles impinging on high-quality diamond films grown by microwave chemical vapor deposition (CVD). Both the amplitude and the time evolution of the pulses are shown to change drastically when the detector is preirradiated with beta particles (pumping), a slow component developing after pumping, indicating carriers trapping and releasing (detrapping). Pulse shapes obtained for positive and negative detector polarities are compared in both the as-grown and pumped states. The presence of at least two trapping centers for holes is necessary to explain the results, the shallower having an activation energy of about 0.3 eV. The effects of pumping are clarified, and the different role played by electrons and holes is evidenced. We modify a previous model for trapping-detrapping behavior originally applied to Si(Li) detectors to describe the more complex behavior of CVD diamond detectors, and develop a computer simulation based on it. The simulated pulse shapes agree very well with experiment with reasonable values of the physical parameters involved, making this technique helpful for studying and identifying defects which are responsible for limitation of the efficiency of CVD diamond particle detectors. Field-assisted detrapping seems to take place for fields of about 10(4) V/cm.