Scanning probe microscopy for testing ultrafast electronic devices

被引：37

作者：

Hou, AS ^{[1
]}

Nechay, BA ^{[1
]}

Ho, F ^{[1
]}

Bloom, DM ^{[1
]}

机构：

[1] STANFORD UNIV,EDWARD L GINZTON LAB,STANFORD,CA 94305

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1996年 / 28卷 / 07期

关键词：

D O I：

10.1007/BF00820151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scanning force microscopy has been developed as a practical, non-contact probing technique for measuring voltage waveforms at internal nodes of integrated devices and circuits. Dynamic voltage contrast is achieved with high spatial and temporal resolution. The factors contributing to system bandwidth, voltage sensitivity and spatial resolution are discussed. Time-domain and frequency-domain measurements of silicon and gallium arsenide circuits are presented.

引用

页码：819 / 841

页数：23

共 22 条

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