A DC-45 GHz metamorphic HEMT traveling wave amplifier

被引：14

作者：

Leoni, RE ^{[1
]}

Lichwala, SJ ^{[1
]}

Hunt, JG ^{[1
]}

Whelan, CS ^{[1
]}

Marsh, PF ^{[1
]}

Hoke, WE ^{[1
]}

Kazior, TE ^{[1
]}

机构：

[1] Raytheon RF Components, Andover, MA 01810 USA

来源：

GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001 | 2001年

关键词：

D O I：

10.1109/GAAS.2001.964363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metamorphic HEMT (MHEMT) technology is capable of providing InP based HEMT performance at GaAs based HEMT levels of manufacturability and cost [1-5]. This makes the MHEMT an attractive alternative for low noise, high frequency, and wide bandwidth applications. The following describes the performance of a dc-45 GHz MHEMT traveling wave amplifier (TWA) that is well suited for broadband applications such as 40 Gb/s fiber-optic receivers. The amplifier provides a typical noise figure of 2 dB and output powers in excess of 3 dBm.

引用

页码：133 / 136

页数：4

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