GaAs metamorphic HEMT (MHEMT): An attractive alternative to InPHEMTs for high performance low noise and power applications

被引：32

作者：

Whelan, CS ^{[1
]}

Marsh, PF ^{[1
]}

Hoke, WE ^{[1
]}

McTaggart, RA ^{[1
]}

McCarroll, CP ^{[1
]}

Kazior, TE ^{[1
]}

机构：

[1] Raytheon RF Components, Andover, MA 01810 USA

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for high performance. This paper will review the material properties, the processing, and the device and amplifier performance of metamorphic HEMTs with 30% to 60% indium channel content, with ii focus on work done at Raytheon RF Components.

引用

页码：337 / 340

页数：4

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