Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate

被引：42

作者：

Bollaert, S ^{[1
]}

Cordier, Y ^{[1
]}

Hoel, V ^{[1
]}

Zaknoune, M ^{[1
]}

Happy, H ^{[1
]}

Lepilliet, S ^{[1
]}

Cappy, A ^{[1
]}

机构：

[1] Inst Electron & Microelectron Nord, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 03期

关键词：

GaAs; HEMT's; InAlAs/InGaAs; metamorphic;

D O I：

10.1109/55.748908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New In0.4Al0.6As/In0.4Ga0.6As metamorphic (MM) high electron mobility transistors (HEMT's) have been successfully fabricated on GaAs substrate with T-shaped gate lengths varying from 0.1 to 0.25 mu m. The Schottky characteristics are a forward turn-on voltage of 0.7 V and a gate breakdown voltage of -10.5 V, These new MM-HEMT's exhibit typical drain currents of 600 mA/mm and extrinsic transconductance superior to 720 mS/mm, An extrinsic current cutoff frequency f(T) of 195 GHz is achieved with the 0.1-mu m gate length device. These results are the first reported for In0.4Al0.6As/In0.4Ga0.6As MM-HEMT's on GaAs substrate.

引用

页码：123 / 125

页数：3

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