Numerical analysis of device performance of metamorphic InyAl1-yAs/InxGa1-xAs (0.3≤x≤0.6) HEMT's on GaAs substrate

被引：18

作者：

Happy, H ^{[1
]}

Bollaert, S ^{[1
]}

Foure, H ^{[1
]}

Cappy, A ^{[1
]}

机构：

[1] Univ Sci & Tech Lille Flandres Artois, Inst Elect & Microelect Nord, UMR CNRS 9929, F-59652 Villeneuve Dascq, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 10期

关键词：

D O I：

10.1109/16.725240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A numerical model describing the influence of InAs mole fraction on metamorphic HEMT structures ((MM-HEMT) is proposed. The material properties are calculated using the Monte Carlo method, while the charge control law is calculated using a self-consistent solution of Poisson's and Schrodinger's equations. The modeling of the de, ac, noise and high frequency performance of a device with 0.25-mu m gate length is performed using the quasi-two-dimensional (Q2D) approach, This analysis shows that an InAs mole fraction of about 0.40 is an optimum composition for manufacturing high gain, low noise amplifiers, In this range of composition, the performance of MM-HEMT structures is similar to that obtained for lattice-matched HEMT's on InP substrates,

引用

页码：2089 / 2095

页数：7

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