Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates

被引：4

作者：

Jang, JH

Cueva, G

Dumka, DC

Hoke, WE

Lemonias, PJ

Fay, P

Adesida, I

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Microelect Lab, Urbana, IL 61801 USA

[3] Raytheon RF Components, Andover, MA 01810 USA

[4] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 11期

关键词：

D O I：

10.1049/el:20010474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and performance of metamorphic InGaAs/InGaAlAs/InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500pA at 5V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55 mum light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer.

引用

页码：707 / 708

页数：2

共 6 条

[1] ULTRAWIDE-BAND LONG-WAVELENGTH P-I-N PHOTODETECTORS [J].

BOWERS, JE ;

BURRUS, CA .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (10) :1339-1350

[2] Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector [J].

Effenberger, FJ ;

Joshi, AM .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1996, 14 (08) :1859-1864

[3] High-performance InGaAs photodetectors on Si and GaAs substrates [J].

Ejeckam, FE ;

Chua, CL ;

Zhu, ZH ;

Lo, YH ;

Hong, M ;

Bhat, R .

APPLIED PHYSICS LETTERS, 1995, 67 (26) :3936-3938

[4] Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates [J].

Hoke, WE ;

Lemonias, PJ ;

Mosca, JJ ;

Lyman, PS ;

Torabi, A ;

Marsh, PF ;

McTaggart, RA ;

Lardizabal, SM ;

Hetzler, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1131-1135

[5] 10Gbit/s long wavelength pin-HEMT photoreceiver grown on GaAs [J].

Hurm, V ;

Benz, W ;

Bronner, W ;

Dammann, M ;

Jakobus, T ;

Kaufel, G ;

Kohler, K ;

Lao, Z ;

Ludwig, M ;

Raynor, B ;

Rosenzweig, J ;

Schlechtweg, M .

ELECTRONICS LETTERS, 1997, 33 (19) :1653-1654

[6] Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates [J].

Jang, JH ;

Cueva, G ;

Dumka, DC ;

Hoke, WE ;

Lemonias, PJ ;

Adesida, I .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (02) :151-153

← 1 →