Hall effect of quasi-hole gas in organic single-crystal transistors

被引：145

作者：

Takeya, J ^{[1
]}

Tsukagoshi, K

Aoyagi, Y

Takenobu, T

Iwasa, Y

机构：

[1] CRIEPI, Mat Sci Res Lab, Tokyo 2018511, Japan

[2] RIKEN, Wako, Saitama 3510198, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Japan Sci & Technol Corp, PRESTO, Kawaguchi, Saitama 3330012, Japan

[5] Tokyo Inst Technol, Yokohama, Kanagawa 3368502, Japan

[6] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3330012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 46-49期

关键词：

organic field-effect transistor; OFET; Hall effect; rubrene; single-crystal FET;

D O I：

10.1143/JJAP.44.L1393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.

引用

页码：L1393 / L1396

页数：4

共 16 条

[1] Field-effect transistors on tetracene single crystals [J].