Lattice-distortion-induced amorphization in indented [110] silicon

被引:26
作者
Wu, YQ [1 ]
Xu, YB
机构
[1] Acad Sinica, Inst Met Res, State Key Lab Fatigue & Fracture Mat, Shenyang 110015, Peoples R China
[2] Acad Sinica, Inst Met Res, Atom Imaging Solids Lab, Shenyang 110015, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1557/JMR.1999.0093
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature.
引用
收藏
页码:682 / 687
页数:6
相关论文
共 23 条
[1]   THE EXTENT OF PHASE-TRANSFORMATION IN SILICON HARDNESS INDENTATIONS [J].
CALLAHAN, DL ;
MORRIS, JC .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (07) :1614-1617
[2]   AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION [J].
CLARKE, DR ;
KROLL, MC ;
KIRCHNER, PD ;
COOK, RF ;
HOCKEY, BJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2156-2159
[3]   REVERSIBLE PRESSURE-INDUCED STRUCTURAL TRANSITIONS BETWEEN METASTABLE PHASES OF SILICON [J].
CRAIN, J ;
ACKLAND, GJ ;
MACLEAN, JR ;
PILTZ, RO ;
HATTON, PD ;
PAWLEY, GS .
PHYSICAL REVIEW B, 1994, 50 (17) :13043-13046
[4]   CRYSTAL AMORPHOUS PHASE-TRANSITION INDUCED BY BALL-MILLING IN SILICON [J].
GAFFET, E ;
HARMELIN, M .
JOURNAL OF THE LESS-COMMON METALS, 1990, 157 (02) :201-222
[5]   A high-resolution electron microscopy study of blue-light emitting beta-SiC nanoparticles in C+-implanted silicon [J].
Gao, YH ;
Zhang, Z ;
Liao, LS ;
Bao, XM .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (06) :1640-1645
[6]   INDENTATION HARDNESS AND SEMICONDUCTOR-METAL TRANSITION OF GERMANIUM AND SILICON [J].
GERK, AP ;
TABOR, D .
NATURE, 1978, 271 (5647) :732-733
[7]   ANALYSIS OF VICKERS INDENTATION [J].
GIANNAKOPOULOS, AE ;
LARSSON, PL ;
VESTERGAARD, R .
INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 1994, 31 (19) :2679-2708
[8]   STATIC COMPRESSION OF SILICON IN THE [100] AND IN THE [111] DIRECTIONS [J].
GUPTA, MC ;
RUOFF, AL .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1072-1075
[9]   CRYSTAL DATA FOR HIGH-PRESSURE PHASES OF SILICON [J].
HU, JZ ;
MERKLE, LD ;
MENONI, CS ;
SPAIN, IL .
PHYSICAL REVIEW B, 1986, 34 (07) :4679-4684
[10]  
IMAI M, 1990, P 4 INT C HIGH PRESS, P188