Lattice-distortion-induced amorphization in indented [110] silicon

被引：26

作者：

Wu, YQ ^{[1
]}

Xu, YB

机构：

[1] Acad Sinica, Inst Met Res, State Key Lab Fatigue & Fracture Mat, Shenyang 110015, Peoples R China

[2] Acad Sinica, Inst Met Res, Atom Imaging Solids Lab, Shenyang 110015, Peoples R China

来源：

JOURNAL OF MATERIALS RESEARCH | 1999年 / 14卷 / 03期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1557/JMR.1999.0093

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature.

引用

页码：682 / 687

页数：6

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