Low-pressure nanoimprint lithography

被引:109
作者
Khang, DY [1 ]
Kang, H [1 ]
Kim, T [1 ]
Lee, HH [1 ]
机构
[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151742, South Korea
关键词
D O I
10.1021/nl049887d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A low pressure (2similar to3 bar) nanoimprint lithography technique is developed that utilizes a thin fluoropolymer film (similar to100 mum) mold. The flexible film mold allows imprinting of submicron pattern features at such a low pressure primarily due to "sequential" imprinting made possible by the mold flexibility and the conformal contact made between the film mold and the substrate. The surface energy of the fluoropolymer mold material is low enough that no mold surface treatment is needed for clean demolding. Easy replication of the film mold by a simple solvent casting is another advantage of the proposed method. Also the nanoscale (<100 nm) replication capability is demonstrated and discussed with a solvent-cast thin film fluoropolymer mold.
引用
收藏
页码:633 / 637
页数:5
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