NO2 sensor based on InP epitaxial thin layers

被引：8

作者：

Battut, V

Blanc, JP

Goumet, E

Soulière, V

Monteil, Y

机构：

[1] Univ Clermont Ferrand 2, CNRS, UMR 6602, LASMEA, F-63177 Aubiere, France

[2] Univ Lyon 1, CNRS, UMR 6515, Lab Multimat & Interfaces, F-69622 Villeurbanne, France

来源：

THIN SOLID FILMS | 1999年 / 348卷 / 1-2期

关键词：

NO2; sensor; InP; resistance; field effect;

D O I：

10.1016/S0040-6090(99)00135-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

n-InP epitaxial thin layers are exposed to concentrations of a diluted oxidizing gas: NO2. in the presence of this gas, the resistance measured parallel to the surface of the InP layer, between ohmic contacts, increases. The magnitude of its variations depends on several parameters: the operating temperature, the thickness and the doping concentration level of the InP layer, and the gas concentration. A theoretical model of the action of the gas is proposed, mixing chemisorption equilibrium and surface field effect. The experimental results are in agreement with the theoretical predictions. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：266 / 272

页数：7

共 23 条

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ACHARD J, IN PRESS APPL SURF S

[2] Gas sensitivity of InP epitaxial thin layers [J].