Gas sensitivity of InP epitaxial thin layers

被引：10

作者：

Battut, V ^{[1
]}

Blanc, JP ^{[1
]}

Maleysson, C ^{[1
]}

机构：

[1] Univ Blaise Pascal, LASMEA UMR 6602 CNRS, F-63177 Aubiere, France

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1997年 / 44卷 / 1-3期

关键词：

gas sensitivity; InP epitaxial thin layers; resistance;

D O I：

10.1016/S0925-4005(97)00130-5

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The resistance of n-InP epitaxial layers is shown to increase or decrease in the presence of oxidizing (O-2,, NO2) or reducing (NH3) gases, respectively. The magnitude of resistance variations depends on gas concentration, on InP layer thickness and on temperature. Interpretation is based on field effect mechanisms resulting from ionization of surface-chemisorbed gas molecules. Gas sensing devices are considered. (C) 1997 Elsevier Science S.A.

引用

页码：503 / 506

页数：4

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