共 21 条
[2]
FERMI LEVEL PINNING DURING OXIDATION OF ATOMICALLY CLEAN N-INP(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1986, 4 (03)
:1424-1426
[3]
ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
[J].
PHYSICAL REVIEW,
1967, 154 (03)
:696-+
[5]
DETERMINATION OF THE COMPLEX DIELECTRIC FUNCTION OF SI(111) 2X1 GAAS(110) AND GAP(110) SURFACES BY POLARIZED SURFACE DIFFERENTIAL REFLECTIVITY
[J].
PHYSICA SCRIPTA,
1988, 38 (02)
:199-203
[7]
INVERSE PHOTOEMISSION FROM SURFACE AND INTERFACE STATES OF III-V-SEMICONDUCTORS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:930-932
[9]
ON THE NATURE OF OXIDES ON INP-SURFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1985, 3 (06)
:2082-2088
[10]
O-1S STUDIES OF THE OXIDATION OF INP(110) AND GAAS(110) SURFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
:1109-1114