THE AMMONIA SENSITIVITY OF PT/GAAS SCHOTTKY-BARRIER DIODES

被引：35

作者：

LECHUGA, LM

CALLE, A

GOLMAYO, D

BRIONES, F

机构：

[1] Centro Nacional de Microelectrónica (CSIC), Serrano

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.349270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work a new ammonia gas sensor is presented. Schottky barrier devices, Pt/n-GaAs, with discontinuous platinum films are sensitive detectors of ammonia gas in a wide temperature range (from room temperature to 150-degrees-C). The effect of parameters such as operation temperature, thickness of the catalytic metal film, background atmosphere, and applied voltage bias on the device sensitivity are investigated. In addition, significant characteristics have been examined including sensitivity limits, linearity of response, and adsorption and desorption kinetics.

引用

页码：3348 / 3354

页数：7

共 18 条

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