Low transparent Pt ohmic contact on p-type GaN by surface treatment using aqua regia

被引：14

作者：

Kim, JK

Lee, JL

Lee, JW ^{[1
]}

Park, YJ

Kim, T

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

[2] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, Kyunggi, South Korea

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 19期

关键词：

D O I：

10.1049/el:19991099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low transparent ohmic contact on p-type GaN has been achieved through the deposition of Pt on p-type GaN treated using boiling aqua regia. The contact resistivity was decreased from 4.7 x 10-1 to 1.4 x 10-4 Ohm cm(2) by the surface treatment. The drastic reduction in contact resistivity originates from both the removal of surface oxides by the bailing aqua regia and the high work function of Pt. The surface treatment plays a role in reducing the barrier height for holes at the Pt/p-type GaN interface, leading to good ohmic contacts on p-type GaN.

引用

页码：1676 / 1678

页数：3

共 4 条

[1] Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment [J].