Compensation mechanism in MOCVD and MBE grown GaN: Mg

被引：24

作者：

Alves, H

Böhm, M

Hofstaetter, A

Amano, H

Einfeldt, S

Hommel, D

Hofmann, DM

Meyer, BK

机构：

[1] Univ Giessen, I Phys Inst, D-35392 Giessen, Germany

[2] Dept Elect & Elect Engn, Nagoya, Aichi, Japan

[3] Univ Bremen, Inst Solid State Phys, Bremen, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

GaN; Mg-acceptor; compensating donors;

D O I：

10.1016/S0921-4526(01)00663-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We studied GaN grown by metal organic chemical vapour deposition (MOCVD) and molecular beam epitaxy doped with different Mg concentrations by photoluminescence, Hall and SIMS measurements. For the MOCVD samples, due to compensating deep donors a saturation of the hole density versus the Mg concentration is observed. These donors are also related to a 2.9 eV recombination observed in photoluminescence. Assuming that the compensating donors formed during growth processes involve nitrogen vacancies, hydrogen and a complex of both species, we are able to calculate the free hole concentration as a function of the Mg concentration for both growth methods. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：38 / 41

页数：4

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