Modeling of {311} defects

被引：19

作者：

Hobler, G ^{[1
]}

Rafferty, CS ^{[1
]}

机构：

[1] Univ Technol Vienna, A-1040 Vienna, Austria

来源：

SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS | 1999年 / 568卷

关键词：

D O I：

10.1557/PROC-568-123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved model of {311} defect evolution is developed based on the rate equations approach. A new expression for the reaction rate constant is presented that is based on the assumption that interstitials may react with the {311} defects along their whole surface. The energetics of {311} defects is treated by calculating the strain energy within the framework of the theory of dislocations in isotropic continua. Using the core energy of the atoms in the defects as the only fit parameter, we explain a wide range of experimental data. Furthermore, we apply the model to investigate closure assumptions used in moments models and propose a new two-moments model that uses the rate equations solver as a pre-processor.

引用

页码：123 / 134

页数：12

共 27 条

[21] DIAMOND HEXAGONAL SILICON PHASE AND (113) DEFECTS - ENERGY CALCULATIONS AND NEW DEFECT MODELS [J].