Investigation of edge recombination effects in silicon solar cell structures using photoluminescence

被引：38

作者：

Abbott, MD ^{[1
]}

Cotter, JE ^{[1
]}

Trupke, T ^{[1
]}

Bardos, RA ^{[1
]}

机构：

[1] Univ New S Wales, Ctr Excellence Adv Silicon Photovolta & Photon, Sydney, NSW 2052, Australia

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2186510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Edge recombination can have a significant impact on the performance of small-area, high-efficiency silicon solar cells. Photoluminescence characterization techniques are applied to assess isolation trench techniques that are designed to remove edge recombination from such solar cells, thereby improving performance and allowing the true bulk properties of the solar cell to be evaluated independent of edge effects. (c) 2006 American Institute of Physics.

引用

页数：3

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