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Defect passivation in multicrystalline silicon for solar cells

被引：9
作者：
Tarasov, I
Ostapenko, S
Nakayashiki, K
Rohatgi, A
机构：
[1] Univ S Florida, Tampa, FL 33620 USA
[2] Georgia Inst Technol, Atlanta, GA 30322 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 19期
关键词：
D O I：
10.1063/1.1815380
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the effect of hydrogen passivation in ribbon multicrystalline silicon (mc-Si) wafers from SiNx:H anti-reflecting layer using simultaneous rapid thermal annealing of Al back-contact and SiNx anti-reflection coating on the front (RTP-Al/SiNx). Scanning room-temperature photoluminescence spectroscopy revealed a strong inhomogeneity in the increase of minority carrier lifetime caused by the hydrogen defect passivation in mc-Si. We present experimental evidence that RTP-Al/SiNx processing leads to strong lifetime enhancement caused by hydrogen defect passivation in low-lifetime regions of mc-Si wafers. Additional details on the hydrogenation mechanism are revealed in a course of the dehydrogenation study. Hydrogen out-diffusion shows a different rate or activation energy between high and low lifetime regions of the wafers. (C) 2004 American Institute of Physics.
引用
收藏
页码：4346 / 4348
页数：3
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