Measurement of mechanical properties for MEMS materials

被引:161
作者
Yi, T [1 ]
Kim, CJ [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA
关键词
silicon mechanical properties; thin-film mechanical properties; silicon fracture strength; microscale tension test; bending test; MEMS; MEMS reliability;
D O I
10.1088/0957-0233/10/8/305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microscopic mechanical devices in microelectromechanical systems (MEMS) use materials such as silicon and many other thin films, which had not previously been considered mechanical materials and thus are not well characterized regarding their mechanical properties. However, as the held matures, sustained research and commercial development in the coming years will demand better understanding of mechanical properties such as Young's modulus and the fracture strength. Uniaxial tension testing is generally considered the most reliable way to measure the mechanical properties. However, the problems associated with the microscopic size of the test specimen for MEMS, such as sample handling and sample alignment, led to such alternative ways as membrane-bulge testing and natural frequency testing at the beginning of MEMS. In this paper, recent methods for testing microscale mechanical properties and their results are summarized. Many reports, based on two distinct types of test, beam bending and direct tension, are introduced. The efforts to integrate the sample and loading system on the microscopic scale are also explained. Studies of fatigue, the most recent development in microscale measurement of mechanical properties, are discussed. The results from the testing methods described are listed for comparison.
引用
收藏
页码:706 / 716
页数:11
相关论文
共 30 条
  • [1] The fracture toughness of polysilicon microdevices
    Ballarini, R
    Mullen, RL
    Kahn, H
    Heuer, AH
    [J]. MICROELECTROMECHANICAL STRUCTURES FOR MATERIALS RESEARCH, 1998, 518 : 137 - 142
  • [2] CRACKING OF THIN BONDED FILMS IN RESIDUAL TENSION
    BEUTH, JL
    [J]. INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 1992, 29 (13) : 1657 - 1675
  • [3] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES
    BRANTLEY, WA
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535
  • [4] Mechanical properties of thin polysilicon films by means of probe microscopy
    Chasiotis, I
    Knauss, WG
    [J]. MATERIALS AND DEVICE CHARACTERIZATION IN MICROMACHINING, 1998, 3512 : 66 - 75
  • [5] CHEN Q, 1998, DSC ASME, V66, P413
  • [6] TENSILE TESTS ON SILICON WHISKERS
    EISNER, RL
    [J]. ACTA METALLURGICA, 1955, 3 (04): : 414 - 415
  • [7] Tensile testing of thin film microstructures
    Greek, S
    Johansson, S
    [J]. MICROMACHINED DEVICES AND COMPONENTS III, 1997, 3224 : 344 - 351
  • [8] Griffith AA., 1921, PHILOS T R SOC A, V221, P163, DOI DOI 10.1098/RSTA.1921.0006
  • [9] Guenther R. D., 1990, MODERN OPTICS
  • [10] FRACTURE TESTING OF SILICON MICROELEMENTS INSITU IN A SCANNING ELECTRON-MICROSCOPE
    JOHANSSON, S
    SCHWEITZ, JA
    TENERZ, L
    TIREN, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) : 4799 - 4803