Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe

被引：23

作者：

Talanov, Vladimir V. ^{[1
]}

Scherz, Andre ^{[1
]}

Moreland, Robert L. ^{[1
]}

Schwartz, Andrew R. ^{[1
]}

机构：

[1] Neocera Inc, Beltsville, MD 20705 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

关键词：

D O I：

10.1063/1.2203238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a method for noncontact, noninvasive measurements of dielectric constant k of 100-nm- to 1.5-mu m-thick blanket low-k interconnect films on up to 300 mm in diameter wafers. The method has about 10 mu m sampling spot size, and provides < 0.3% precision and +/- 2% accuracy for k value. It is based on a microfabricated near-field scanned microwave probe formed by a 4 GHz parallel strip transmission line resonator tapered down to a few micron tip size.(c) 2006 American Institute of Physics.

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