Suppression of the Anderson localization of charge carriers on polysilane quantum wire

被引：24

作者：

Ichikawa, T ^{[1
]}

Yamada, Y

Kumagai, J

Fujiki, M

机构：

[1] Hokkaido Univ, Grad Sch Engn, Div Mol Chem, Sapporo, Hokkaido 0608628, Japan

[2] Nagoya Univ, Sch Engn, Dept Appl Chem, Nagoya, Aichi 4648601, Japan

[3] NTT, Basic Res Ctr, Atsugi, Kanagawa 24301, Japan

来源：

CHEMICAL PHYSICS LETTERS | 1999年 / 306卷 / 5-6期

关键词：

D O I：

10.1016/S0009-2614(99)00487-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Comparison of the ESR and electronic absorption spectra of the radical ions of poly(cyclohexylmethylsilane) and poly(n-decyl-(s)-2-methylbutylsilane) has shown that the Anderson localization of charge carriers on part of the Si-Si polymer skeleton can be suppressed by replacing the pendant groups with bulky ones. Replacement reduces the flexibility of the polymer skeleton and therefore the dispersion of the resonance energies of the charge carriers between adjacent Si atoms, which suppresses the localization of the charge carriers arising from irregularity of the periodic potential field on the skeleton. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：275 / 279

页数：5

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