Magnetotransport through magnetic domain patterns in permalloy rectangles

被引：17

作者：

Bolte, M

Steiner, M

Pels, C

Barthelmess, M

Kruse, J

Merkt, U

Meier, G

Holz, M

Pfannkuche, D

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

[2] Univ Hamburg, Zentrum Mikrostukturforsch, D-20355 Hamburg, Germany

[3] Univ Hamburg, Inst Theoret Phys, D-20355 Hamburg, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 22期

关键词：

D O I：

10.1103/PhysRevB.72.224436

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the influence of multidomain configurations on the magnetoresistance of rectangular permalloy microstructures with various thicknesses. The anisotropic magnetoresistance (AMR) is the dominating resistance contribution in these systems. Reversible and irreversible magnetization reversals lead to complex AMR signals. Appropriate positioning of the voltage probes allows the local detection of the magnetoresistance. Two methods for calculating the local AMR, the uniform-current model and diffusive transport calculations, are described. The latter takes potential differences and inhomogenous current paths into account. By comparing magnetoresistance measurements, micromagnetic simulations, and images of magnetic-force microscopy for various film thicknesses, we can exactly link the transitions between magnetic configurations to changes observed in the magnetoresistance.

引用

页数：8

共 47 条

[31] In-plane and out-of-plane anisotropic magnetoresistance in Ni80Fe20 thin films [J].