Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed buffer

被引：5

作者：

Fukatsu, S ^{[1
]}

Usami, N ^{[1
]}

Shiraki, Y ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new class of Si-based quantum confined geometry is demonstrated using a combination of oppositely strained layers grown on a step-graded relaxed SiGe buffer. The role of heterointerfaces is revealed as the controlling mechanism of the exciton localization, which results in enhanced no-phonon transition intensity. (C) 1996 American Vacuum Society.

引用

页码：2387 / 2390

页数：4

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