OPTOELECTRONIC ASPECTS OF STRAINED SI1-XGEX/SI QUANTUM-WELLS

被引：22

作者：

FUKATSU, S

机构：

[1] Department of Pure and Applied Sciences, The University of Tokyo, Meguro-ku, 153, Tokyo

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1995年 / 6卷 / 05期

关键词：

D O I：

10.1007/BF00125890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical properties of molecular beam epitaxially grown strained Si1-xGex/Si quantum wells (QWs) are described highlighting their potentials to optoelectronics applications. Fundamentals regarding luminescence properties associated with Si-lattice-mathced strained Si1-xGex/Si QWs and their allied extended structures are described, followed by demonstration of challenges in the context of materials growth and quantum electronics with primary focus on light emitter fabrication.

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页码：341 / 349

页数：9

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