Quantum-dot injection heterolaser with 3.3 W output power

被引：3

作者：

Kovsh, AR ^{[1
]}

Livshits, DA ^{[1
]}

Zhukov, AE ^{[1
]}

Egorov, AY ^{[1
]}

Maksimov, MV ^{[1
]}

Ustinov, VM ^{[1
]}

Tarasov, IS ^{[1
]}

Ledentsov, NN ^{[1
]}

Kop'ev, PS ^{[1
]}

Alferov, ZI ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, AF Ioffe Physicotech Inst, Russian Acad Sci, St Petersburg Inst Festkorperphys, D-10623 Berlin, Germany

来源：

TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 06期

关键词：

D O I：

10.1134/1.1262530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous-wave lasing has been achieved via the ground state of composite vertically coupled InAlAs/InGaAs quantum dots in an AlGaAs matrix with a room temperature output power of 3.3 W at both mirrors. (C) 1999 American Institute of Physics. [S1063-7850(99)00706-5].

引用

收藏

页码：438 / 439

页数：2

相关论文

共 12 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[3] Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region [J].

Evtikhiev, VP ;

Kudryashov, IV ;

Kotel'nikov, EY ;

Tokranov, VE ;

Titkov, AN ;

Tarasov, IS ;

Alferov, ZI .

SEMICONDUCTORS, 1998, 32 (12) :1323-1327

[4] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[5]

KIRSTAEDTER N, 1995, P 8 ANN M IEEE LAS E, V1, P290

[6] Effect of the quantum-dot surface density in the active region on injection-laser characteristics [J].

Kovsh, AR ;

Zhukov, AE ;

Egorov, AY ;

Ustinov, VM ;

Shernyakov, YM ;

Maksimov, MV ;

Tsatsul'nikov, AF ;

Volovik, BV ;

Lunev, AV ;

Ledentsov, NN ;

Kop'ev, PS ;

Alferov, ZI ;

Bimberg, D .

SEMICONDUCTORS, 1998, 32 (09) :997-1000

[7] Maximum output power and maximum operating temperature of quantum well lasers [J].

Makino, T ;

Evans, JD ;

Mak, G .

APPLIED PHYSICS LETTERS, 1997, 71 (20) :2871-2873

[8] Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W [J].

Shernyakov, YM ;

Egorov, AY ;

Zhukov, AE ;

Zaitsev, SV ;

Kovsh, AR ;

Krestnikov, IL ;

Lunev, AV ;

Ledentsov, NN ;

Maksimov, MV ;

Sakharov, AV ;

Ustinov, VM ;

Chen, C ;

Kopev, PS ;

Alferov, ZI ;

Bimberg, D .

TECHNICAL PHYSICS LETTERS, 1997, 23 (02) :149-150

[9] Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region [J].

Shernyakov, YM ;

Egorov, AY ;

Volovik, BV ;

Zhukov, AE ;

Kovsh, AR ;

Lunev, AV ;

Ledentsov, NN ;

Maksimov, MV ;

Sakharov, AV ;

Ustinov, VM ;

Zhao, Z ;

Kop'ev, PS ;

Alferov, ZI ;

Bimberg, D .

TECHNICAL PHYSICS LETTERS, 1998, 24 (05) :351-353

[10] Low threshold quantum dot injection laser emitting at 1.9μm [J].

Ustinov, VM ;

Zhukov, AE ;

Egorov, AY ;

Kovsh, AR ;

Zaitsev, SV ;

Gordeev, NY ;

Kopchatov, VI ;

Ledentsov, HN ;

Tsatsul'nikov, AF ;

Volovik, BV ;

Kop'ev, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Liliental-Weber, Z ;

Bimberg, D .

ELECTRONICS LETTERS, 1998, 34 (07) :670-672