Low threshold quantum dot injection laser emitting at 1.9μm

被引：48

作者：

Ustinov, VM

Zhukov, AE

Egorov, AY

Kovsh, AR

Zaitsev, SV

Gordeev, NY

Kopchatov, VI

Ledentsov, HN

Tsatsul'nikov, AF

Volovik, BV

Kop'ev, PS

Alferov, ZI

Ruvimov, SS

Liliental-Weber, Z

Bimberg, D

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 07期

关键词：

D O I：

10.1049/el:19980373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-organised InAs quantum dots inserted in an (In, Ga)As matrix lattice matched to an InP substrate are used as an active region in an injection laser. Low threshold (11.4A/cm(2)) lasing at 1.894 mu m (77K) via the states of the quantum dots is obtained. A material gain of the order of 10(4)cm(-1) is estimated.

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收藏

页码：670 / 672

页数：3

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