Low threshold quantum dot injection laser emitting at 1.9μm

被引:48
作者
Ustinov, VM
Zhukov, AE
Egorov, AY
Kovsh, AR
Zaitsev, SV
Gordeev, NY
Kopchatov, VI
Ledentsov, HN
Tsatsul'nikov, AF
Volovik, BV
Kop'ev, PS
Alferov, ZI
Ruvimov, SS
Liliental-Weber, Z
Bimberg, D
机构
[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
关键词
D O I
10.1049/el:19980373
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Self-organised InAs quantum dots inserted in an (In, Ga)As matrix lattice matched to an InP substrate are used as an active region in an injection laser. Low threshold (11.4A/cm(2)) lasing at 1.894 mu m (77K) via the states of the quantum dots is obtained. A material gain of the order of 10(4)cm(-1) is estimated.
引用
收藏
页码:670 / 672
页数:3
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