Stepped growth and etching of (001)diamond

被引：38

作者：

Hayashi, K ^{[1
]}

Yamanaka, S ^{[1
]}

Okushi, H ^{[1
]}

Kajimura, K ^{[1
]}

机构：

[1] UNIV TSUKUBA,FAC MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

关键词：

homoepitaxial diamond film; step-flow epitaxy; hydrogen plasma etching; chemical vapor deposition;

D O I：

10.1016/0925-9635(95)00470-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have observed, for the first time, step-flow etching of (001) diamond substrates using hydrogen plasma treatment and have succeeded in step-flow epitaxial growth of diamond films on these hydrogen plasma-treated substrates. By subjecting diamond (001) substrates to hydrogen plasma, the corrugated structure observed before the treatment almost disappears and atomic steps (several atoms high) running over the surface parallel to the [110] direction appear. This shows that lateral propagation of multiatomic steps takes place during etching. In the step-flow epitaxial growth, multi-atomic steps with a terrace width of approximately 8 nm run over the surface parallel to the [110] direction, suggesting that the migration length of precursors under plasma conditions is longer than previously reported for hot filament growth.

引用

页码：1002 / 1005

页数：4

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