HIGH-QUALITY HOMOEPITAXIAL GROWTH OF DIAMOND FILMS

被引：18

作者：

VITTON, JP

GARENNE, JJ

TRUCHET, S

机构：

[1] Centre de Recherche et de Technologie Kodak-Pathe, Cedex

来源：

关键词：

D O I：

10.1016/0925-9635(93)90209-K

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High quality diamond films have been grown by hot-filament-assisted and microwave-plasma-assisted chemical vapour deposition on (100) natural diamond crystal for a range of temperatures from about 700 to 1000-degrees-C. Pure diamond pyramidal growth structures and crystallites were obtained at high temperatures while smooth transparent films were grown between 750 and 850-degrees-C. Both types of film give a low channelling yield with Rutherford backscattering spectroscopy, comparable with single-crystal diamond with no mismatch feature, and no graphite peak by Raman spectroscopy.

引用

页码：713 / 717

页数：5

共 16 条

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[2]

FUJIMORI N, 1989, MATERIALS RES SOC S, V192, P23

[3] THE ELECTRICAL-PROPERTIES AND DEVICE APPLICATIONS OF HOMOEPITAXIAL AND POLYCRYSTALLINE DIAMOND FILMS [J].