DIAMOND(001) SINGLE-DOMAIN 2X1 SURFACE GROWN BY CHEMICAL-VAPOR-DEPOSITION

被引:78
作者
TSUNO, T
TOMIKAWA, T
SHIKATA, S
IMAI, T
FUJIMORI, N
机构
[1] Itami Laboratory, Research Institute of Innovative Technology for the Earth, Itami Research Laboratories Sumitomo Electric Industries Ltd., Itami, Hyogo 664
[2] Itami Research Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664
关键词
D O I
10.1063/1.111107
中图分类号
O59 [应用物理学];
学科分类号
摘要
Diamond homoepitaxial films were grown on an off-angle (001) substrate with a misorientation of 4.3 degrees toward the [110] direction by microwave plasma-assisted chemical vapor deposition from a methane-hydrogen gas mixture. The single domain 2x1 surface was observed by low-energy electron diffraction (LEED) and scanning tunneling microscopy, after growth with methane concentration of 2%. With a methane concentration of 6%, the LEED superstructure spot intensity from another domain increased, suggesting a higher rate of two-dimensional nucleation.
引用
收藏
页码:572 / 574
页数:3
相关论文
共 15 条
  • [1] INSITU RHEED OBSERVATION OF SELECTIVE DIMINUTION AT SI(001)-2 X-1 SUPERLATTICE SPOTS DURING MBE
    AIZAKI, N
    TATSUMI, T
    [J]. SURFACE SCIENCE, 1986, 174 (1-3) : 658 - 665
  • [2] DIAMOND HOMOEPITAXY BY CHEMICAL-VAPOR-DEPOSITION
    BADZIAN, A
    BADZIAN, T
    [J]. DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) : 147 - 157
  • [3] SCANNING TUNNELING MICROSCOPY ON CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS
    BUSMANN, HG
    SPRANG, H
    HERTEL, IV
    ZIMMERMANNEDLING, W
    GUNTHERODT, HJ
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (03) : 295 - 297
  • [4] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES
    CHADI, DJ
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1691 - 1694
  • [5] DERYAGUIN PV, 1975, J CRYST GROWTH, V31, P44
  • [6] SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN SI(001) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
    HOEVEN, AJ
    LENSSINCK, JM
    DIJKKAMP, D
    VANLOENEN, EJ
    DIELEMAN, J
    [J]. PHYSICAL REVIEW LETTERS, 1989, 63 (17) : 1830 - 1832
  • [7] HOEVEN AJ, 1993, J VAC SCI TECHNOL A, V8, P3657
  • [8] DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA
    KAMO, M
    SATO, Y
    MATSUMOTO, S
    SETAKA, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 642 - 644
  • [9] DEVICE PROPERTIES OF HOMOEPITAXIALLY GROWN DIAMOND
    LANDSTRASS, MI
    PLANO, MA
    MORENO, MA
    MCWILLIAMS, S
    PAN, LS
    KANIA, DR
    HAN, S
    [J]. DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) : 1033 - 1037
  • [10] MATSUMOTO S, 1982, J APPL PHYS, V21, P483